| PART |
Description |
Maker |
| HYS72D256220GBR-7-B HYS72D128300HBR-5-B HYS72D1283 |
256MB - 2GB, 184pin
|
Infineon
|
| HYS72T32000HU-3.7-A HYS72T32000HU-5-A |
256MB - 2GB, 240pin
|
Infineon
|
| HYS64T128021HDL-3.7-A HYS64T32000HDL-3.7-A HYS64T6 |
256MB - 2GB, 200pin
|
Infineon
|
| M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块，基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| HYMD116725AL8-K HYMD116725AL8-L HYMD116725AL8-H HY |
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX72 |的CMOS |内存| 184PIN |塑料
|
Toshiba, Corp.
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| W3EG72256MS133AJD3SG |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL 2GB 256Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Xilinx, Inc.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| K5D5657ACM-F015 |
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronics
|
| HDD32M72D9RPW-13A HDD32M72D9RPW-13B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit），基于2Mx8Banks 8K的参考。，184Pin - DIMM内存的锁相环
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| TS2GJF2A |
2GB USB2.0 JetFlash垄莽2A
2GB USB2.0 JetFlash?2A
|
Transcend Information. Inc.
|
